As the industry’s leading provider of SSD controllers and storage solutions, Goke Microelectronics was invited to the 2019 Flash Memory Summit to demonstrate an ultra-low latency NVMe SSD based on Toshiba Memory’s XL-FLASH memory.
One year ago, Toshiba Memory announced XL-FLASH at the 2018 Flash Memory Summit, promising to use ultra-low latency 3D SLC flash to reduce read latency to 5μs, which is equivalent to 1/10th of read latency of 3D TLC NAND.
Goke 2311-series drives are based on the 2311 SSD controller and are paired with Toshiba Memory’s XL-FLASH memory. The prototype of 2311-series drives have implemented an overall 4K random read latency under 20μs and the final drives will offer a 4K random read latency in less than 15μs. Goke 2311-series drives support up to 4TB capacity with a maximum write bandwidth of 1GB/s and read bandwidth of 3GB/s through a PCIe Gen3x4 interface. They will also support SM2/3/4 and SHA-256/AES-256 with built-in security engines.
"Toshiba Memory is very pleased to see the successful integration of Toshiba Memory’s XL-FLASH product with Goke’s products. The low-latency characteristic has been demonstrated on Goke’s flagship NVMe-SSD controller,” said Hiroo Ota, Technology Executive, Memory Application Engineering, Toshiba Memory Corporation.
Goke 2311 drives will be expected to be in production in 2020.