Micron Technology, Inc., today announced that it has begun volume shipments of the world’s first 176-layer 3D NAND flash memory, achieving unprecedented, industry-pioneering density and performance. Together, Micron’s new 176-layer technology and advanced architecture represent a radical breakthrough, enabling immense gains in application performance across a range of storage use cases spanning data center, intelligent edge and mobile devices.
“Micron’s 176-layer NAND sets a new bar for the industry, with a layer count that is almost 40% higher than our nearest competitor’s,” said Scott DeBoer, executive vice president of technology and products at Micron. “Combined with Micron’s CMOS-under-array architecture, this technology sustains Micron’s industry cost leadership.”
Representing Micron’s fifth generation of 3D NAND and second-generation replacement-gate architecture, Micron’s 176-layer NAND is the most technologically advanced NAND node in the market. Compared with the company’s previous generation of high-volume 3D NAND, Micron’s 176-layer NAND improves both read latency and write latency by more than 35% — dramatically accelerating application performance. Featuring approximately 30% smaller die size than best-in-class competitive offerings, Micron’s 176-layer NAND’s compact design is ideal for solutions using small form factors.Add a comment