Micron Technology, Inc.today introduced Micron 9200 Series of NVMe™ SSDs, the company's latest flagship performance solid-state storage family. The innovative architecture and industry leading performance of Micron 9200 SSDs allows organizations to access data faster and stay one step ahead of the growing diversity of business-critical workloads and surging data demands.
The new Micron 9200 SSD combines the cost-effective capacity of 3D NAND with the proven throughput and response time of the NVM Express (NVMe) protocol. Built from the ground up to remove legacy layers of hard drive interfaces, Micron's second generation of NVMe drives unleashes the speed of solid state nonvolatile memory to maximize data center efficiency for optimal total cost of ownership (TCO).Add a comment
Toshiba America Electronic Components, Inc. (TAEC), a committed technology leader, announces the new SG6 series, the latest Toshiba client SSD to feature 64-layer, 3-bit-per-cell TLC (triple-level cell) BiCS FLASH™ to deliver better transfer speeds and power efficiency. This family of SSDs is designed for mainstream desktops and notebooks, consumer upgrades, as well as applications needing data security.
With increased performance over the prior generation, SG6 features the latest SATA technology to deliver up to 550 MB/s sequential read and 535 MB/s sequential write, and up to 100,000 and 85,000 random read/write IOPS delivering enhanced application performance. Furthermore, compared to its previous generation, active power consumption was decreased by up to 40% enabling increased battery life for mobile computing.Add a comment
Today, Intel announces major data center storage advances, reiterating Intel’s memory technology leadership. The new technologies advance data center storage and deliver innovative solutions to meet the challenges presented by the growing reliance on data. They include:
“We are in the midst of an era of major data center transformation, driven by Intel. These new “ruler” form factor SSDs and dual port SSDs are the latest in a long line of innovations we’ve brought to market to make storing and accessing data easier and faster, while delivering more value to customers,” said Bill Leszinske, Intel vice president, Non-Volatile Memory Solutions Group (NSG), and director, strategic planning, marketing and business development. “Data drives everything we do – from financial decisions to virtual reality gaming, and from autonomous driving to machine learning – and Intel storage innovations like these ensure incredibly quick, reliable access to that data.”Add a comment
Toshiba America Electronic Components, Inc. (TAEC), a committed technology leader, today unveiled the development of two new flagship enterprise solid state drive (SSD) solutions, the TMC PM5 12Gbit/s SAS series and the CM5 NVM Express® (NVMe™) series. Development is expected to be completed in the fourth quarter. Both product lines are built with TMC’s latest 64 layer, 3-bit-per-cell enterprise-class TLC (triple-level cell) BiCS FLASH, making it possible for today’s demanding storage environments to expand the use of flash with cost-optimized 3D flash memory. With all-new, advanced features, the innovative CM5 and PM5 series raise the bar in performance capabilities and create new opportunities for businesses to leverage the power of flash storage.
Offering up to 30.72TB in a 2.5-inch form factor, the TMC PM5 series introduces a full range of endurance and capacity SAS SSDs enabling data centers to effectively address big data demands while streamlining storage deployments. With the industry’s first MultiLink SAS™ architecture, the PM5 series is able to deliver the fastest performance the market has seen from a SAS-based SSD with up to 3,350 MB/s of sequential read and 2,720 MB/s of sequential write in MultiLink mode and up to 400,000 random read IOPS in narrow or MultiLink mode. The PM5 series’ 4-port MultiLink design is an additional technology to achieve high performance, close to PCI EXPRESS® (PCIe®) SSDs, enabling legacy infrastructures to increase productivity without having to be re-architected from the ground up. Furthermore, PM5 SSDs support multi-stream write technology, a feature that intelligently manages and groups data types to minimize write amplification and minimize garbage collection, translating into reduced latency, improved endurance, increased performance and Quality of Service (QoS).Add a comment
Toshiba Memory Corporation, the world leader in memory solutions, today announced the launch of the BG3 series, a new line-up of single package NVM Express (NVMe) client SSDs integrating Toshiba Memory Corporation’s cutting-edge 64-layer, 3-bit-per-cell (TLC) BiCS FLASH and controller in a ball grid array (BGA) package. Sample shipments to PC OEM customers start today in limited quantities, and Toshiba Memory Corporation will gradually increase shipments from the fourth calendar quarter of this year.
The new BG3 series SSDs utilizes the features of PCI EXPRESS (PCIe) Gen3 x 2lanes and NVMeTM Revision 1.2.1 architecture. They are also equipped with a Host Memory Buffer (HMB) feature, which uses the host memory to substitute for DRAMs, saving power and space, and supporting developers of compact devices who must achieve a balance between high performance and low power consumption. Also, the combined benefits of SLC cache features, improved flash management and flash memory performance add up to deliver performance of up to 1520MB/s sequential read and 840MB/s sequential write.Add a comment
Silicon Power, a leading provider of memory storage solutions, releases a new, stylish portable hard drive, the Diamond D30, that combines classic notebook design with modern storage needs.
Judge It by Its Cover
The Diamond D30 is for fans of classic stationary with digital storage needs or those who just love simple, yet classy design and clever functions for their digital devices. The signature red book mark of the D30 not only serves as an attractive eye-catcher, but also protects the USB port when the drive is not in use. With the port covered, even water splashes will not be harmful to stored data thanks to the drive’s IPX4 water resistance.
Toshiba America Electronic Components, Inc. (TAEC), a committed technology leader, today unveiled the TR200 SATA solid state drive (SSD) series for the retail market. Leveraging Toshiba’s latest 3-bit-per-cell TLC (triple-level cell) BiCS FLASH, the TR200 series offers PC gamers and DIY enthusiasts Toshiba’s first upgrade SSD with 64-layer 3D flash memory.
Toshiba TR200 SSDs are an easy and affordable way to enhance notebook or desktop experiences by increasing system responsiveness and productivity over traditional hard disk drives (HDDs). With a 6Gbit/s SATA interface, the TR200 series is rated for sequential read/write speeds of up to 550MB/s and 525MB/s and random read/write performances of up to 80,000 and 87,000 input/output operations per second (IOPS). In addition to excellent SATA performance, TR200 SSDs provide low power consumption that translates into a longer battery life for on-the-go users.Add a comment
Silicon Power, a leading provider of memory storage solutions, adds another brilliant coup of storage convenience to its OTG flash drive portfolio – the new Mobile C50.
As all good things come in threes, SP’s new OTG Mobile C50 has three connectors –USB Type-A, Micro-B, and Type-C. Never lost for the right connection, it’s easier than ever to share data between new-generation USB Type-C devices, any “traditional” USB PC or laptop, and Micro-B smartphones or tablets. The compact drive is also a reliable companion for extra storage needs plug-n-play and tops up USB Type-C or Micro-B mobile devices with up to 128GB free space.Add a comment
The USB 3.0 Promoter Group today announced the pending release of the USB 3.2 specification, an incremental update that defines multi-lane operation for new USB 3.2 hosts and devices. USB Developer Days 2017 will include detailed technical training covering USB 3.2, fast charging advancements in USB Power Delivery, and other exciting topics.
While USB hosts and devices were originally designed as single-lane solutions, USB Type-C™ cables were designed to support multi-lane operation to ensure a path for scalable performance. New USB 3.2 hosts and devices can now be designed as multi-lane solutions, allowing for up to two lanes of 5 Gbps or two lanes of 10 Gbps operation. This enables platform developers to continue advancing USB products to fit their customers’ needs by effectively doubling the performance across existing cables. For example, a USB 3.2 host connected to a USB 3.2 storage device will now be capable of realizing over 2 GB/sec data transfer performance over an existing USB Type-C™ cable that is certified for SuperSpeed USB 10 Gbps.
“When we introduced USB Type-C to the market, we intended to assure that USB Type-C cables and connectors certified for SuperSpeed USB or SuperSpeed USB 10 Gbps would, as produced, support higher performance USB as newer generations of USB 3.0 were developed,” said Brad Saunders, USB 3.0 Promoter Group Chairman. “The USB 3.2 update delivers the next level of performance.”Add a comment
Western Digital Corp. today announced its successful development of four bits per cell, X4, flash memory architecture offering on 64-layer 3D NAND, BiCS3, technology. Building on its pioneering innovation of X4 for 2D NAND technology and past success in commercializing it, the company has now developed X4 for 3D NAND by leveraging its deep vertical integration capabilities. These include silicon wafer processing, device engineering to provide sixteen distinct data levels in every storage node, and system expertise for overall flash management. BiCS3 X4 technology delivers an industry-leading storage capacity of 768 gigabits on a single chip, a 50 percent increase from the prior 512 gigabit chip that was enabled with the three bits per cell (X3) architecture. Western Digital will showcase removable products and solid-state drives built with BiCS3 X4 and systems capabilities in August at the Flash Memory Summit in Santa Clara, California.
“The implementation of X4 architecture on BiCS3 is a significant development for Western Digital as it demonstrates our continued leadership in NAND flash technology, and it also enables us to offer an expanded choice of storage solutions for our customers,” said Dr. Siva Sivaram, executive vice president, Memory Technology, Western Digital. “The most striking aspect in today’s announcement is the use of innovative techniques in the X4 architecture that allows our BiCS3 X4 to deliver performance attributes comparable to those in BiCS3 X3. The narrowing of the performance gap between the X4 and X3 architectures is an important and differentiating capability for us, and it should help drive broader market acceptance of X4 technology over the next several years.”Add a comment