Samsung Begins Mass Producing 256-Gigabit, 3D V-NAND Flash Memory
Samsung Electronics Co., Ltd., the world leader in advanced memory technology, today announced that it has begun mass producing the industry’s first 256-gigabit (Gb), three-dimensional (3D) Vertical NAND (V-NAND) flash memory based on 48 layers of 3-bit multi-level-cell (MLC) arrays for use in solid state drives (SSDs).

“With the introduction of our 3rd generation V-NAND flash memory to the global market, we can now provide the best advanced memory solutions, with even higher efficiency based on improved performance, power utilization and manufacturing productivity, thereby accelerating growth of the high-performance and the high-density SSD markets,” said Young-Hyun Jun, President of the Memory Business at Samsung Electronics. “By making full use of Samsung V-NAND’s excellent features, we will expand our premium-level business in the enterprise and data center market segments, as well as in the consumer market, while continuing to strengthen our strategic SSD focus.”
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ADATA Technology, a leading manufacturer of high performance DRAM modules and NAND flash products, today launched the Premier SP550 SSD, which uses triple-level cell (TLC) architecture to offer an affordable SSD without compromising performance. The Premier SP550 is the first ADATA drive to include the Silicon Motion (SMI) SM2256 controller, which uses NANDXtend technology to help ADATA implement SSD technologies such as data shaping, LDPC ECC, and a RAID engine for enhanced data protection, stability, and reliability. SLC caching technology has been implemented to boost performance.



