Samsung Starts Mass Producing Industry’s First 3D Vertical NAND Flash
Samsung Electronics Co., Ltd., the world leader in advanced memory technology, today announced that it has begun mass producing the industry’s first three-dimensional (3D) Vertical NAND (V-NAND) flash memory, which breaks through the current scaling limit for existing NAND flash technology. Achieving gains in performance and area ratio, the new 3D V-NAND will be used for a wide range of consumer electronics and enterprise applications, including embedded NAND storage and solid state drives (SSDs).

Samsung’s new V-NAND offers a 128 gigabit (Gb) density in a single chip, utilizing the company’s proprietary vertical cell structure based on 3D Charge Trap Flash (CTF) technology and vertical interconnect process technology to link the 3D cell array. By applying both of these technologies, Samsung’s 3D V-NAND is able to provide over twice the scaling of 20nm-class* planar NAND flash.



SanDisk Corporation, a global leader in flash memory storage solutions, today announced SanDisk Connect, a line of wireless flash memory storage devices including the SanDisk Connect Wireless Flash Drive and SanDisk Connect Wireless Media Drive. These new wireless devices represent the next generation of portable storage, delivering an easier way to access and share content across multiple mobile devices.
Transcend Information, a leading manufacturer of industrial-grade products, today introduced the HSD740 half-slim SATA III 6Gb/s solid state drive (SSD). Featuring the latest SATA specification, Transcend's HSD740 SATA III half-slim SSD delivers peak performance in industrial grade standards, yet offers significantly smaller dimensions and superior long-term reliability than 2.5" form factor hard disk drives.