Synology Inc. launched the new DiskStation DS1517 and DS1817, powerful and scalable 5-bay and 8-bay desktop NAS. DS1817 is the first Value series equipped with built-in 10GbE LAN ports and an expandable RAM module, delivering future-proof, high-speed storage for professionals and growing small/medium-sized businesses.

DS1817 is powered by a quad-core 1.7GHz processor with RAM module expandable up to 8GB. Thanks to the built-in 10GbE interfaces, DS1817 can achieve outstanding sequential throughput performance exceeding 1,577 MB/s reading and 739 MB/s writing when using RAID 5. The built-in 10GBASE-T ports and 1GBASE-T LAN ports pave the way for businesses to upgrade to a 10GbE environment, and provide the support of Link Aggregation and failover.

DS1517 is powered by a quad-core 1.7GHz processor, 2GB RAM, and four Gigabit LAN ports featuring failover and Link Aggregation. It delivers sequential throughput performance over 449 MB/s writing and 436 MB/s reading when using RAID 5.

Samsung Electronics, the world leader in advanced memory technology, today announced that it has begun volume production of 64-layer, 256Gb V-NAND flash memory for use with an expanding line-up of storage solutions for server, PC and mobile applications.

Since Samsung began producing the industry’s first SSD based on 64-layer 256Gb V-NAND chips in January for key IT customers, it has been working on a wide range of new V-NAND-based mobile and consumer storage solutions. These include embedded UFS memory, branded SSDs and external memory cards, which the company plans to introduce later this year.

To solidify its competitive edge in the memory market, Samsung intends for its volume production of the 64-layer V-NAND chip, which is widely referred to as 4th generation V-NAND, to cover more than 50 percent of its monthly NAND flash production by year end.

ADATA Technology, a leading manufacturer of high performance DRAM modules and NAND Flash products, today launched the industrial-grade IM2P3388 PCIe Gen3x4 M.2 2280 solid state drive. It employs 3D MLC NAND Flash and an SMI controller to deliver performance several times faster than SATA III SSDs, with read up to 2500MB/s and write reaching 1100MB/s. The M.2 2280 form factor fits easily in the IT setup of industrial and enterprise users, while the IM2P3388 can withstand a wide temperature range, shocks, and vibration. The IM2P3388 is offered in up to 1TB and supports a range of features such as S.M.A.R.T, TRIM, power fail protection, and secure erase.

Ultra-fast 3D MLC NAND M.2 SSD
The IM2P3388 complies with NVMe 1.2 specifications to provide performance optimized for low latency, big bandwidth PCI Express 3.0 x4 (four lanes). Users tap up to 2500MB/s read and 1100MB/s write, greatly accelerating data transfers to help increase productivity and efficiency. ADATA is offering the IM2P3388 in 128GB, 256GB, 512GB, and 1TB. All models carry premium 3D MLC NAND that has been carefully sorted, tested, and verified to the highest standards. SLC and DRAM caching provide speed boosts for sustained performance during even the most intense activity sessions, preventing bandwidth or IOPS drop offs.

The month of June will undoubtedly go down as a great month for Xbox gamers. First, Xbox Game Pass went live at the beginning of the month, giving access to a regularly updated catalog of 100+ Xbox games. This week at E3 the next big Xbox titles will be revealed, making gamers further brim with anticipation. With Xbox Game Pass allowing direct downloads, and added games coming to the Xbox library, having enough space to enjoy all this greatness is critical.

That’s why Seagate took its latest storage solution for Xbox gamers to the next level. The new Seagate Game Drive Hub for Xbox features 8TB of storage and a multi-purpose USB hub for players with massive game libraries—demanding peak game storage capacity for today’s most advanced games. Designed and tested in collaboration with Xbox, Game Drive Hub for Xbox works seamlessly with any console in the Xbox One family of devices (Xbox One, Xbox One S and Xbox One X).