Toshiba Develops World's First QLC 3D Flash Memory
Toshiba Memory Corporation, the world leader in memory solutions, today announced development of the world’s first BiCS FLASH™ three-dimensional (3D) flash memory with a stacked cell structure. The newest BiCS FLASH™ device is the first to deliver 4-bit-per-cell (quadruple-level cell, QLC) technology, advancing capacity beyond that of triple-level cell (TLC) devices and pushing the boundaries of flash memory technology.

Multi-bit cell flash memories store data by managing the number of electrons in each individual memory cell. Achieving QLC technology posed a series of technical challenges, as increasing the number of bit-per-cell by one within same electron count requires twice the accuracy of TLC technology. Toshiba Memory has drawn on its advanced circuit design capabilities and industry-leading 64-layer 3D flash memory process technology to create the QLC 3D flash memory.
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CDRLabs has taken an in depth look Patriot's PCIe NVMe SSD, the Hellfire. Designed with the needs of content creators, gamers and enthusiasts in mind, this M.2 form factor drive is powered by Phison's PS5007-E7 controller and offers features like static and advanced wear-leveling, advanced garbage collection, TRIM support and bad block management. The Hellfire is also equipped with up to 480GB of Toshiba's 15nm MLC NAND flash as well as an ultra-fast PCIe Gen3 x4 NVMe 1.2 interface to deliver read and write speeds that are up to 4x faster than SATA SSDs.