Micron Announces High-Capacity 16nm TLC NAND
Today, Micron Technology, Inc. announced a new addition to its expansive portfolio of flash storage products, providing a purpose-built solution for cost-sensitive consumer applications seeking high performance and reliability. The new TLC NAND is built on their 16-nanometer (nm) process and delivers a balanced set of features for applications like USB drives and consumer solid state drives. The market appetite for TLC is projected to be strong throughout 2015, constituting almost half of the total NAND gigabytes shipped.
Micron's 16nm process—recognized by TechInsights as the Most Innovative Memory Device and 2014 Semiconductor of the Year—is a mature and proven storage technology, making it an excellent foundation for a reliable TLC design. TLC, or triple-level cell, is a technology that fits three bits in every flash data cell, creating greater cost and size efficiency.
Customers of the technology will benefit from Micron's extensive design support team, who act as trusted advisors to ensure smooth qualification and optimal end-solution performance. Key flash customers and ecosystem partners worldwide have already begun working to integrate this new NAND with their latest designs, ensuring quick adoption in end applications.
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