QNAP Systems, Inc., a leading computing, networking, and storage solution innovator, today unveiled the 2U short-depth rackmount TS-873AeU NAS series, including the TS-873AeU and TS-873AeU-RP, with high-performance and energy-efficient AMD Ryzen™ Embedded V1000 series V1500B 4-core/8-thread, 2.2GHz processors. The series is available in 8-bay models with single and redundant power supply options. The TS-873AeU series is suitable for tackling resource-demanding applications and tasks, such as virtual machines, intensive multi-user access, or hybrid cloud applications, making it a cost-efficient solution for businesses that depend on virtualization or VDI applications.

The 2U rackmount TS-873AeU series has a short depth design of only 11.7 inches (297.4 mm) for up to 38% reduction in size, making it an excellent choice for smaller racks, wall-mount AV rack cabinets, and network rack cabinets. Space saved by its short depth design can greatly benefit cabling or ventilation. The TS-873AeU series is ideal for flexible deployment and is especially suitable for installation in locations such as offices, audiovisual rooms, and for applications such as security surveillance recording.

SMART Modular Technologies, Inc. (“SMART”), a division of SGH and a global leader in memory solutions, solid-state drive (SSD) and hybrid storage products announces the next generation of its DuraFlash™ ME2 family of SATA SSD products, which includes industry-standard M.2 2242, M.2 2280, mSATA, Slim SATA and 2.5” form factors. These SSDs are available in both industrial and commercial temperature grades and have versions that implement SMART’s SafeDATA™ power-loss, data-protection technology for graceful handling of power fluctuations and sudden power loss events.

The new ME2 SSDs incorporate the latest generation 3D NAND-technology and SMART Modular’s proprietary NVMSentry™ firmware to deliver high performance SSD products with endurance up to one drive writes per day (DWPD) for five years using JEDEC JESD219A enterprise endurance workload. The new NAND device offers better cost per bit over previous 64-layer and 96-layer NAND generations without sacrificing performance and reliability.

Samsung Electronics and Western Digital today announced that they have signed a memorandum of understanding (MOU) for a unique collaboration to standardize and drive broad adoption of next-generation data placement, processing and fabrics (D2PF) storage technologies. The companies will initially focus on aligning their efforts and creating a vigorous ecosystem for Zoned Storage solutions. These steps will enable the industry to focus on countless applications that ultimately create greater value for customers.

This marks the first time that both Samsung and Western Digital have come together as technology leaders to create widespread alignment and stimulate awareness for important storage technologies. Focusing on enterprise and cloud applications, the partnership is expected to spur a range of collaborations around technology standardization and software development for D2PF technologies like Zoned Storage. With this collaboration, end-users can have confidence that these emerging storage technologies will have support from multiple device vendors as well as from vertically integrated hardware and software companies.

KIOXIA America, Inc. today announced that it has started sampling new Automotive Universal Flash Storage (UFS) Ver. 3.1 embedded flash memory devices. The new lineup utilizes KIOXIA cutting-edge BiCS FLASH™ 3D flash memory and is available in capacities from 64 gigabytes (GB) to 512GB to support the various requirements of evolving automotive applications that elevate driver experiences.

The storage requirements for automotive applications continue to increase as infotainment systems and ADAS in cars become more sophisticated. UFS is well-suited to support the high-performance and density needs of these applications. The new devices support a wide temperature range (-40°C to +105°C), meet AEC-Q100 Grade2 requirements and offer enhanced reliability capabilities that increasingly complex automotive applications require.

The sequential read and write performance of the Automotive UFS Ver. 3.1 device is significantly improved by approximately 2.2x and 6x respectively, over previous generation devices. These performance gains contribute to faster system startup and OTA (Over-the-Air) updates.

TEAMGROUP is leading the DDR5 evolution with its leading-edge R&D capabilities. In addition to the overclocking DDR5 gaming memory market, the company has set its sights on the burgeoning laptop market in this era of increasing remote and mobile work. Today TEAMGROUP has released the ELITE SO-DIMM DDR5 Standard Memory, which runs at the all-new ultra-high clock speed of 4,800MHz and comes in both single and dual-channel kits. The ELITE SO-DIMM DDR5 Standard Memory is the perfect choice for laptop users looking for an impressive performance upgrade without hassle.

TEAMGROUP's ELITE SO-DIMM DDR5 Memory operates at the standard DDR5 memory frequency of 4,800MHz, which is up to 50% higher than DDR4's maximum of 3,200MHz. Furthermore, the standard operating voltage of DDR5 is 1.1V, a reduction from the 1.2V in DDR4 that can substantially reduce power consumption and extend standby times of laptops. These major improvements in performance and power efficiency greatly enhance the convenience of laptop use on the go. DDR5 also has twice the burst length of DDR4, significantly increasing the amount of data that can be accessed in a single burst. Furthermore, DDR5 is equipped with unique Same-Bank Refresh command, allowing simultaneous data processing in multiple banks. Upgrading your laptop to DDR5 memory will significantly boost operating efficiency and storage performance, fully meeting your multitasking needs.

As industries compete to capitalize on the abundance of data generated by intelligent, connected devices, implementation of an intelligent data strategy has become even more critical. Edge computing has played an instrumental role to address this demand, but the edge itself has continued to evolve with the ever-growing need for even more demanding, real-time computing. Rugged edge computing enables applications that require real-time, low latency data processing and storage to function reliably in volatile environments that are not friendly to regular systems.

Trends and technologies such as Industry 4.0, AIoT, and 5G are driving the need for improved intelligence at the rugged edge. Businesses and organizations want more computing power at the edge because of the benefits it provides to their operations. NVM Express (NVMe) is an essential enabling technology for rugged edge computing, reducing latency and accelerating data processing to the point where connected devices can operate anywhere to perform machine learning, artificial intelligence, and inference computing. Real-time data access and analytics are turning rugged edge computing into a competitive necessity across all sectors and industries.

Swissbit has expanded its product range with the launch of the M.2 SATA SSD X-78m2. The new series is designed for especially write-intensive applications, is ideal for audio, video, and data recording, as well as serving as a boot medium, and achieves 2.5 times the endurance of previous generations. At the same time, it meets the most stringent requirements for reliability, temperature stability, and longevity. This makes the SSD suitable for any application that requires high endurance without compromising on data retention or temperature profiles.

Typical target applications include industrial PCs, point-of-sale (PoS) systems, embedded and surveillance systems, as well as mission-critical applications in the transportation, medical, networking, and communications sectors. The X-78m2 series is based on the compact M.2 2242 form factor and is immediately available with storage capacities ranging from 40 GB to 320 GB.