Samsung Electronics Co., Ltd., the world leader in advanced memory technology, today announced that it has begun mass producing the highest-capacity mobile DRAM – the industry’s first 12-gigabyte (GB) low-power double data rate 4X (LPDDR4X) package – optimized for tomorrow’s premium smartphones. Featuring higher capacity than most ultra-thin notebooks, the new mobile DRAM will enable smartphone users to take full advantage of all the features in next-generation smartphones.
“With mass production of the new LPDDR4X, Samsung is now providing a comprehensive lineup of advanced memory to power the new era of smartphones, from 12GB mobile DRAM to 512GB eUFS 3.0 storage,” said Sewon Chun, executive vice president of Memory Marketing at Samsung Electronics. “Moreover, with the LPDDR4X, we’re strengthening our position as the premium mobile memory maker best positioned to accommodate rapidly growing demand from global smartphone manufacturers.”Add a comment
Western Digital Corp., a global data infrastructure leader, is accelerating the NVMe transition of value-PC storage by adding an NVMe model to its award-winning WD Blue solid state drive (SSD) portfolio, the WD Blue SN500 NVMe SSD. The new SSD delivers three times the performance of its SATA counterpart1 while maintaining the reliability the WD Blue product line is known for. For content creators and PC enthusiasts, the WD Blue SN500 NVMe SSD is optimized for multitasking and resource-heavy applications, providing near-instant access to files and programs.
Leveraging the scalable in-house SSD architecture of the highly acclaimed WD Black SN750 NVMe SSD, the new WD Blue SN500 NVMe SSD is also built on Western Digital’s own 3D NAND technology, firmware and controller, and delivers sequential read and write speeds up to 1,700MB/s and 1,450MB/s respectively (for 500GB model) with efficient power consumption as low as 2.7W. Demands on storage are continuing to grow and client workloads are evolving, the WD Blue SN500 NVMe SSD features high sustained write performance over SATA as well as other emerging technologies on the market today to give that performance edge.Add a comment
Toshiba Memory America, Inc., the U.S.-based subsidiary of Toshiba Memory Corporation, announced availability of its XD5 Series NVMe SSD platform in a 2.5-inch, 7mm low-profile form factor that is optimized for low-latency and performance consistency in read-intensive workloads. Developed for both data center and cloud environments, the new 2.5-inch form factor XD5 Series is ideal for NoSQL databases, large-scale-out data mining and analysis, and streaming applications. The XD5 Series is also well-suited for Open Compute Project (OCP) applications and systems.
Built on 64-layer BiCS FLASH™ TLC (3-bit-per-cell) 3D flash memory, and featuring a PCIe® Gen3x4 interface, the new XD5 SSD 2.5-inch option delivers sequential read performance up to 2,700 megabytes per second (MB/s) and sequential write performance up to 895MB/s with low active power consumption of 7 watts. At one drive write per day4 (DWPD), the XD5 Series can write nearly 4 terabytes (TB) of random data daily for five years at a consistent performance rate. Random read/write performance is specified at 250,000/21,000 Input/Output Operations per Second (IOPS) respectively, making the XD5 Series a predictable and reliable solution for read-intensive or heavy transactional workloads.
The XD5 2.5-inch Series expands Toshiba Memory’s broad data center SSD portfolio and complements the previously released M.2 22100 form factor which supports 1,920 gigabyte (GB) and 3,840GB capacities. The flash memory and controllers leveraged within the XD5 Series offer high reliability, data protection, end-to-end error detection and power-loss protection, and the product is backed by a five-year limited warranty.Add a comment
Micron Technology, Inc. today added a new cost-efficient solid-state drive (SSD) to its client computing portfolio. The Micron 1300 SSD makes flash storage accessible to more users, enabling its adoption in a broader set of personal computing devices for a better mobile computing experience. Consumers who are eager to move from rotating media to solid state drives value fast performance, quick startup, and reliability -- whether for desktop, mobile or workstation PCs. SSDs address these needs better than power-hungry hard disk drives (HDDs), yet their higher prices have kept users from shifting to SSDs. Micron redesigned the 1300 SSD series to close the price gap.
"The deployment of advanced 3D NAND technologies has led the client SSD market to branch into value and higher-performance storage segments," said Gregory Wong, president of Forward Insights. "Micron's latest client SSD solutions provide a coherent migration path from HDD to value-oriented SSDs."Add a comment
Western Digital Corp. today announced two new additions to its broad portfolio of NVMe-based systems, platforms, SSDs, and memory drives for data center and cloud customers. With a full portfolio covering applications from edge-to-core, these additions are the Western Digital Ultrastar DC SN630 NVMe SSD and the Western Digital CL SN720 NVMe SSD. Each leverages the power of Western Digital’s vertical integration capabilities, including internally developed controller and firmware architectures, and 64-layer 3D NAND technology. As a replacement for lower-performing SATA SSDs, these new NVMe drives meet the insatiable need for performance, scalability, endurance and low total cost of ownership (TCO) for public and private cloud deployments, hyperscale cloud environments, and next-generation workloads at the edge.
IT managers face challenges such as managing multiple workload types, scaling at optimal TCO, and controlling server sprawl. Due to its inherent scalability and performance benefits, NVMe is quickly becoming the de facto standard for everything from traditional scale-up database applications to emerging edge computing architectures.Add a comment
Samsung Electronics Co., Ltd., the world leader in advanced memory technology, today announced that it has begun mass producing the industry’s first 512-gigabyte (GB) embedded Universal Flash Storage (eUFS) 3.0 for next-generation mobile devices. In line with the latest eUFS 3.0 specification, the new Samsung memory delivers twice the speed of the previous eUFS storage (eUFS 2.1), allowing mobile memory to support seamless user experiences in future smartphones with ultra-large high-resolution screens.
“Beginning mass production of our eUFS 3.0 lineup gives us a great advantage in the next-generation mobile market to which we are bringing a memory read speed that was before only available on ultra-slim laptops,” said Cheol Choi, executive vice president of Memory Sales & Marketing at Samsung Electronics. “As we expand our eUFS 3.0 offerings, including a 1-Terabyte (TB) version later this year, we expect to play a major role in accelerating momentum within the premium mobile market.”Add a comment
As consumer demand for high-quality content continues to rise, Western Digital Corp. is enabling a bigger, faster experience with new industry-leading solutions that give consumers the best combination of performance and capacity so they can do more with the rich content they capture. At Mobile World Congress, the company is showcasing the world’s fastest 1TB UHS-I microSD flash memory card, the 1TB SanDisk Extreme UHS-I microSDXC card. The new card features higher speed and capacity for capturing and moving massive amounts of high-quality photos and videos on smartphones, drones and action cameras. These impressive levels of capacity and speed give consumers the ability to create all the content they want without worrying about space limitations or long transfer times.
Today’s smartphones and cameras allow consumers to create high-quality content in the palm of their hands, thanks to features like multi-lenses, burst mode capabilities and the 4K resolution. Western Digital continues to deliver the most advanced solutions to ensure consumers can reliably capture and share a special moment or create video content for personal or professional use.Add a comment
The SD Association announced today microSD Express, offering the popular PCI Express and NVMe interfaces alongside the legacy microSD interface for backwards compatibility. Like SD Express, microSD Express uses the PCIe interface delivering a 985 megabytes per second (MB/s) maximum data transfer rate and the NVMe upper layer protocol enables advanced memory access mechanism, enabling a new world of opportunities for mobile devices.
microSD Express cards defined in the SD 7.1 specification will be offered in a variety of capacities such as microSDHC Express, microSDXC Express and microSDUC Express. An updated video provides an overview of microSD Express and SD Express.Add a comment
ADATA Technology, a leading manufacturer of high-performance DRAM modules, NAND Flash products, and mobile accessories today launched its ADATA Ultimate SU750 2.5” SATA 6Gb/s solid-state drives (SSD). With next-generation TLC (Triple-Level Cell) 3D NAND Flash and a host of other features, SU750 SSDs deliver terrific value, great performance, and superb reliability to offer users an excellent option for their next upgrade.
Implementing 3D NAND Flash, Ultimate SU750 SSDs features higher storage capacities of 256GB, 512GB, and 1TB. With SLC Caching, the drives can achieve read/write speeds of up to 550/520MB per second to accelerate PC performance. Users will revel in not having to wait around to access files and for programs to load. What’s more, with no mechanical components, SU750 SSDs are more resilient than HDDs. They are more resistant to shock and vibration (1500G/0.5ms), therefore providing better protection of data. Also, SSDs also run silently and consume less power than HDDs.Add a comment
Toshiba Memory Corporation, the world leader in memory solutions, today announced the development of a bridge chip that realizes high-speed and large-capacity SSDs. Using developed bridge chips with a small occupied area and low-power consumption, the company has succeeded in connecting more flash memory chips with fewer high-speed signal lines than with the conventional method of no bridge chips. This result was announced in San Francisco on February 20, at the International Solid-State Circuits Conference 2019 (ISSCC 2019).
In SSDs, multiple flash memory chips are connected to a controller that manages their operation. As more flash memory chips are connected to a controller interface, operating speed degrades, so there are limits to the number of chips that can be connected. In order to increase capacity, it is necessary to increase the number of interfaces, but that results in an enormous number of high-speed signal lines connected to the controller, making it more difficult to implement the wiring on the SSD board.Add a comment