Western Digital Corp. today announced its successful development of four bits per cell, X4, flash memory architecture offering on 64-layer 3D NAND, BiCS3, technology. Building on its pioneering innovation of X4 for 2D NAND technology and past success in commercializing it, the company has now developed X4 for 3D NAND by leveraging its deep vertical integration capabilities. These include silicon wafer processing, device engineering to provide sixteen distinct data levels in every storage node, and system expertise for overall flash management. BiCS3 X4 technology delivers an industry-leading storage capacity of 768 gigabits on a single chip, a 50 percent increase from the prior 512 gigabit chip that was enabled with the three bits per cell (X3) architecture. Western Digital will showcase removable products and solid-state drives built with BiCS3 X4 and systems capabilities in August at the Flash Memory Summit in Santa Clara, California.
“The implementation of X4 architecture on BiCS3 is a significant development for Western Digital as it demonstrates our continued leadership in NAND flash technology, and it also enables us to offer an expanded choice of storage solutions for our customers,” said Dr. Siva Sivaram, executive vice president, Memory Technology, Western Digital. “The most striking aspect in today’s announcement is the use of innovative techniques in the X4 architecture that allows our BiCS3 X4 to deliver performance attributes comparable to those in BiCS3 X3. The narrowing of the performance gap between the X4 and X3 architectures is an important and differentiating capability for us, and it should help drive broader market acceptance of X4 technology over the next several years.”Add a comment
ADATA Technology, a leading manufacturer of high performance DRAM modules and NAND Flash products, today launched industrial-grade ISSS314 solid state drives in 3D MLC and 3D TLC versions. All models can withstand a wide temperature range, extreme shocks and vibrations, as well as humidity to meet the needs of industrial users. Using hardened and carefully sorted components, ISSS314 SSDs consume just 2.5W to lower operating costs while providing speedy 560MB/s read and 520MB/s write. They are offered in 3D MLC and 3D TLC NAND plus capacities ranging from 32GB to 512GB in order to better cover and serve as many budgets and needs as possible.
Benefits of 3D NAND for industrial users
The increased durability and power efficiency of stacked NAND Flash compared to older planar NAND offers very appealing advantages in applications that require non-stop and long term use. The ISSS314 range has an MTBF of 2 million hours, which is 25% more than comparable 2D NAND drives. At the same time, they consume just 2.5W per drive while reaching 512GB in capacity. Modest power draw translates into major electricity savings over the life of the drive, especially in large installations where many units are needed. Across the range, ISSS314 drives reach 560MB/s read and 520MB/s write.
Super Talent Technology, a leading manufacturer of NAND Flash storage solutions and DRAM memory modules, unveils its new TwoDrive with Lightning and USB3.0 connectors. Super Talent’s TwoDrive is a high-speed flash drive with Lightning and USB 3.0 dual end connectors to quickly and easily transfer files between devices, and works with use of free STT Mobile Manager app from App Store. The TwoDrive flash drive features a rotational connector design to allow user to swing the Lightning plug while the plug is in use.
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ADATA Technology, a leading manufacturer of high performance DRAM modules, NAND Flash products, and mobile accessories today launched the SE730H external solid state drive, an update of the best-selling SE730. The SE730H performs at 500MB/s read and write, and moves to 3D TLC NAND for increased durability and longevity, while remaining one of the most compact external SSDs worldwide. It has a reversible USB-C connector for greater convenience, and a stylish metallic design. Data transfers use USB 3.1 Gen 2 (up to 10Gbps). Importantly, the SE730H meets IEC IP68 dust and water proof requirements, as well as military-grade shock mitigation standards. Available in 256GB and 512GB, the SE730H is Windows, Mac OS, and Android compatible for seamless cross-platform usage.
Super compact with the benefit of 3D NAND
While previous generation SE730 drives were only available in 250GB, the shift to high quality 3D TLC NAND has allowed ADATA to offer the SE730H in up to 512GB. At the same time, the SE730H maintains is compact footprint as the smallest device in its class (external USB-C 3D NAND SSD). It weighs a mere 33g, and users can choose from gold or red metallic color schemes. With 3D TLC NAND, the SE730H delivers more than just bigger capacity: 3D NAND is also around 25% longer-lasting than 2D NAND, and more reliable for the life of the product while consuming less power, a plus for paired device batteries. In terms of performance, the SE730H reaches 500MB/s read and write, or about five times the speed of external mechanical drives.
ADATA Technology, a leading manufacturer of high performance DRAM modules and NAND Flash products, today launched its XPG GAMMIX product series, first shown at Computex 2017. The debut consists of the GAMMIX S10 PCIe3x4 NVMe 1.2 M.2 2280 SSD, capable of 1800MB/s read and 850MB/s write thanks to premium 3D NAND in up to 1TB capacity. The S10 features a stylish heatsink for expedited heat dissipation. It is joined by GAMMIX D10 DDR4 memory modules, which likewise boast a custom heatshield to ensure lower temperatures and more stable performance. They are offed in black and red colors, and in up to 3000MHz factory speeds with a starting speed of 2666MHz on new Intel X299 motherboards. The GAMMIX line provides gamers, PC DIY enthusiasts, and overclockers with additional options that combine performance and design, stemming from the core XPG mission statement of ensuring better experiences.
GAMMIX S10: PCIe3x4 NVMe 1.2 M.2 with a cool twist
With speeds up to 1800MB/s read and 850MB/s write, the S10 leverages the efficiency of the M.2 2280 form factor and the NVMe 1.2 protocol to better serve performance seekers, from gamers to graphics professionals. It cuts down data transfer waits, loading times, and seek latency, and packs up to 1TB 3D TLC NAND driven by an SMI controller. The custom-designed XPG heatsink ensures temperatures are at least 10 degrees Celsius lower than non-shielded M.2 SSDs, promoting stability and longevity. DRAM and SLC caching help maintain peak performance, with read/write IOPS ratings of 130K/140K. The S10 further supports LDPC error correction, and has a 2 million hour mean time before failure rating. It arrives backed by a 5-year warranty. In addition to 1TB, customers can choose from 128GB, 256GB, and 512GB models.
Toshiba Memory Corporation, the world leader in memory solutions, today announced development of the world’s first BiCS FLASH™ three-dimensional (3D) flash memory utilizing Through Silicon Via (TSV) technology with 3-bit-per-cell (triple-level cell, TLC) technology. Shipments of prototypes for development purposes started in June, and product samples are scheduled for release in the second half of 2017. The prototype of this groundbreaking device will be showcased at the 2017 Flash Memory Summit in Santa Clara, California, United States, from August 7-10.
Devices fabricated with TSV technology have vertical electrodes and vias that pass through silicon dies to provide connections, an architecture that realizes high speed data input and output while reducing power consumption. Real-world performance has been proven previously, with the introduction of Toshiba’s 2D NAND Flash memory.Add a comment
Samsung Electronics, a world leader in advanced semiconductor technology, today announced that its new semiconductor fabrication line in Pyeongtaek, South Korea, has begun mass production and shipping its first product to customers. The new facility will focus on the production of Samsung’s fourth-generation V-NAND (64 layers), adding to the company’s leading capacity for cutting-edge memory products.
“With the dedication and support of our employees, customers and partners, our new Pyeongtaek campus represents a new chapter in Samsung’s semiconductor operations,” said Oh-Hyun Kwon, Vice Chairman and Chief Executive Officer of Samsung Electronics.
With two years of construction since it broke ground in May, 2015, the fabrication line at the Pyeongtaek campus is currently the largest single Fab in the industry.Add a comment
Western Digital Corp., a global data storage technology and solutions leader, today announced that it has successfully developed its next-generation 3D NAND technology, BiCS4, with 96 layers of vertical storage capability. Sampling to OEM customers is expected to commence in the second half of calendar year 2017 and initial production output is expected in calendar year 2018. BiCS4, which was developed jointly with Western Digital's technology and manufacturing partner Toshiba Corporation, will be initially deployed in a 256-gigabit chip and will subsequently ship in a range of capacities, including a terabit on a single chip.
"Our successful development of the industry's first 96-layer 3D NAND technology demonstrates Western Digital's continued leadership in NAND flash and solid execution to our technology roadmap," said Dr. Siva Sivaram, executive vice president of memory technology at Western Digital. "BiCS4 will be available in 3-bits-per-cell and 4-bits-per-cell architectures, and it contains technology and manufacturing innovations to provide the highest 3D NAND storage capacity, performance and reliability at an attractive cost for our customers. Western Digital's 3D NAND portfolio is designed to address the full range of end markets spanning consumer, mobile, computing and data center."Add a comment
Toshiba Memory Corporation, the world leader in memory solutions, today announced development of the world’s first BiCS FLASH™ three-dimensional (3D) flash memory with a stacked cell structure. The newest BiCS FLASH™ device is the first to deliver 4-bit-per-cell (quadruple-level cell, QLC) technology, advancing capacity beyond that of triple-level cell (TLC) devices and pushing the boundaries of flash memory technology.
Multi-bit cell flash memories store data by managing the number of electrons in each individual memory cell. Achieving QLC technology posed a series of technical challenges, as increasing the number of bit-per-cell by one within same electron count requires twice the accuracy of TLC technology. Toshiba Memory has drawn on its advanced circuit design capabilities and industry-leading 64-layer 3D flash memory process technology to create the QLC 3D flash memory.Add a comment
Toshiba Memory Corporation, the world leader in memory solutions, today announced that it has developed a prototype sample of 96-layer BiCS FLASH™ three-dimensional (3D) flash memory with a stacked structure, with 3-bit-per-cell (triple-level cell, TLC) technology. Samples of the new 96-layer product, which is a 256 gigabit (32 gigabytes) device, are scheduled for release in the second half of 2017 and mass production is targeted for 2018. The new device meets market demands and performance specifications for applications that include enterprise and consumer SSD, smartphones, tablets and memory cards.
Going forward, Toshiba Memory Corporation will apply its new 96-layer process technology to larger capacity products, such as 512 gigabit (64 gigabytes) and 4-bit-per-cell (quadruple-level cell, QLC) technology, in the near future.
The innovative 96-layer stacking process combines with advanced circuit and manufacturing process technology to achieve a capacity increase of approximately 40% per unit chip size over the 64-layer stacking process. It reduces the cost per bit, and increases the manufacturability of memory capacity per silicon wafer.Add a comment