Toshiba Memory Corporation, the world leader in memory solutions, today announced development of the world’s first BiCS FLASH™ three-dimensional (3D) flash memory utilizing Through Silicon Via (TSV) technology with 3-bit-per-cell (triple-level cell, TLC) technology. Shipments of prototypes for development purposes started in June, and product samples are scheduled for release in the second half of 2017. The prototype of this groundbreaking device will be showcased at the 2017 Flash Memory Summit in Santa Clara, California, United States, from August 7-10.

toshiba 3d flash tsv

Devices fabricated with TSV technology have vertical electrodes and vias that pass through silicon dies to provide connections, an architecture that realizes high speed data input and output while reducing power consumption. Real-world performance has been proven previously, with the introduction of Toshiba’s 2D NAND Flash memory.

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Samsung Electronics, a world leader in advanced semiconductor technology, today announced that its new semiconductor fabrication line in Pyeongtaek, South Korea, has begun mass production and shipping its first product to customers. The new facility will focus on the production of Samsung’s fourth-generation V-NAND (64 layers), adding to the company’s leading capacity for cutting-edge memory products.

samsung Pyeongtaek plant

“With the dedication and support of our employees, customers and partners, our new Pyeongtaek campus represents a new chapter in Samsung’s semiconductor operations,” said Oh-Hyun Kwon, Vice Chairman and Chief Executive Officer of Samsung Electronics.

With two years of construction since it broke ground in May, 2015, the fabrication line at the Pyeongtaek campus is currently the largest single Fab in the industry.

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western digital 3d nandWestern Digital Corp., a global data storage technology and solutions leader, today announced that it has successfully developed its next-generation 3D NAND technology, BiCS4, with 96 layers of vertical storage capability. Sampling to OEM customers is expected to commence in the second half of calendar year 2017 and initial production output is expected in calendar year 2018. BiCS4, which was developed jointly with Western Digital's technology and manufacturing partner Toshiba Corporation, will be initially deployed in a 256-gigabit chip and will subsequently ship in a range of capacities, including a terabit on a single chip.

"Our successful development of the industry's first 96-layer 3D NAND technology demonstrates Western Digital's continued leadership in NAND flash and solid execution to our technology roadmap," said Dr. Siva Sivaram, executive vice president of memory technology at Western Digital. "BiCS4 will be available in 3-bits-per-cell and 4-bits-per-cell architectures, and it contains technology and manufacturing innovations to provide the highest 3D NAND storage capacity, performance and reliability at an attractive cost for our customers. Western Digital's 3D NAND portfolio is designed to address the full range of end markets spanning consumer, mobile, computing and data center."

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Toshiba Memory Corporation, the world leader in memory solutions, today announced development of the world’s first BiCS FLASH™ three-dimensional (3D) flash memory with a stacked cell structure. The newest BiCS FLASH™ device is the first to deliver 4-bit-per-cell (quadruple-level cell, QLC) technology, advancing capacity beyond that of triple-level cell (TLC) devices and pushing the boundaries of flash memory technology.

Toshiba QLC 3D Flash

Multi-bit cell flash memories store data by managing the number of electrons in each individual memory cell. Achieving QLC technology posed a series of technical challenges, as increasing the number of bit-per-cell by one within same electron count requires twice the accuracy of TLC technology. Toshiba Memory has drawn on its advanced circuit design capabilities and industry-leading 64-layer 3D flash memory process technology to create the QLC 3D flash memory.

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toshiba logoToshiba Memory Corporation, the world leader in memory solutions, today announced that it has developed a prototype sample of 96-layer BiCS FLASH™ three-dimensional (3D) flash memory with a stacked structure, with 3-bit-per-cell (triple-level cell, TLC) technology. Samples of the new 96-layer product, which is a 256 gigabit (32 gigabytes) device, are scheduled for release in the second half of 2017 and mass production is targeted for 2018. The new device meets market demands and performance specifications for applications that include enterprise and consumer SSD, smartphones, tablets and memory cards.

Going forward, Toshiba Memory Corporation will apply its new 96-layer process technology to larger capacity products, such as 512 gigabit (64 gigabytes) and 4-bit-per-cell (quadruple-level cell, QLC) technology, in the near future.

The innovative 96-layer stacking process combines with advanced circuit and manufacturing process technology to achieve a capacity increase of approximately 40% per unit chip size over the 64-layer stacking process. It reduces the cost per bit, and increases the manufacturability of memory capacity per silicon wafer.

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MacSales.com, a leading zero emissions Mac and PC technology company, announced today the availability of the new OWC 2.0TB Aura Pro Solid State Drive for mid-2012 to early 2013 Apple MacBook Pro with Retina display. One of the fastest internal SSDs available on the market, the Aura Pro SSD is also compatible with 2010-2012 MacBook Air.

macsales aura pro ssd

Aura Pro SSD Also Available with Envoy Pro Enclosure

The Aura Pro 2.0TB SSD upgrade frees up and boosts capacity on the internal hard drive – at over five years of MacBook Pro ownership. The Aura Pro drive is also available as a kit with an Envoy Pro enclosure to immediately reuse an Apple internal hard drive, creating a new external USB 3.1 Gen1 portable drive.

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Beijing Memblaze Technology Co., Ltd. today announced the launch of its next generation of PCIe NVMe SSD products, PBlaze 5 700 and 900 series, for hyper-scale data center deployment and for enterprise mission critical applications, respectively. PBlaze5 utilizes high-quality 3D Enterprise-level TLC NAND and supports NVMe 1.2a, with SSD user capacities up to 11TB.

Memblaze PBlaze5 ssd

PBlaze5 comes in 2.5-inch U.2 and HHHL add-in card form factors and provides high performance 6GB/s read bandwidth (128KB) and >1M IOPS random read (4KB), with typical read write latency of 90/15μs. PBlaze5 U.2 interface is hot plugable, hot removable and hot swapable, effectively reducing data center operation complexity.

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ADATA Technology, a leading manufacturer of high performance DRAM modules and NAND Flash products, today launched the industrial-grade IM2P3388 PCIe Gen3x4 M.2 2280 solid state drive. It employs 3D MLC NAND Flash and an SMI controller to deliver performance several times faster than SATA III SSDs, with read up to 2500MB/s and write reaching 1100MB/s. The M.2 2280 form factor fits easily in the IT setup of industrial and enterprise users, while the IM2P3388 can withstand a wide temperature range, shocks, and vibration. The IM2P3388 is offered in up to 1TB and supports a range of features such as S.M.A.R.T, TRIM, power fail protection, and secure erase.

adata IM2P3388 pcie ssd

Ultra-fast 3D MLC NAND M.2 SSD
The IM2P3388 complies with NVMe 1.2 specifications to provide performance optimized for low latency, big bandwidth PCI Express 3.0 x4 (four lanes). Users tap up to 2500MB/s read and 1100MB/s write, greatly accelerating data transfers to help increase productivity and efficiency. ADATA is offering the IM2P3388 in 128GB, 256GB, 512GB, and 1TB. All models carry premium 3D MLC NAND that has been carefully sorted, tested, and verified to the highest standards. SLC and DRAM caching provide speed boosts for sustained performance during even the most intense activity sessions, preventing bandwidth or IOPS drop offs.

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Samsung Electronics, the world leader in advanced memory technology, today announced that it has begun volume production of 64-layer, 256Gb V-NAND flash memory for use with an expanding line-up of storage solutions for server, PC and mobile applications.

Samsung 64 layer 256Gb V NAND

Since Samsung began producing the industry’s first SSD based on 64-layer 256Gb V-NAND chips in January for key IT customers, it has been working on a wide range of new V-NAND-based mobile and consumer storage solutions. These include embedded UFS memory, branded SSDs and external memory cards, which the company plans to introduce later this year.

To solidify its competitive edge in the memory market, Samsung intends for its volume production of the 64-layer V-NAND chip, which is widely referred to as 4th generation V-NAND, to cover more than 50 percent of its monthly NAND flash production by year end.

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Mushkin Enhanced MFG, an industry-leading designer and manufacturer of high-performance and mission-critical computer products, today unveiled their new and improved mushkin.com website, and announced availability of their new REACTOR ARMOR3D and TRIACTOR 3D SSD Lines.

mushkin reactor armor3d ssd

Featuring Silicon Motion's SM2258 controller the REACTOR ARMOR3D and TRIACTOR 3D are ideal tools for gamers, professionals, and consumers in need of high capacity storage solutions. Providing a complete set of fully loaded features with industry leading capabilities and Mushkin Enhance technologies, including:

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