ADATA Technology, a leading manufacturer of high performance DRAM modules, NAND Flash products, and mobile accessories today launched the SE730H external solid state drive, an update of the best-selling SE730. The SE730H performs at 500MB/s read and write, and moves to 3D TLC NAND for increased durability and longevity, while remaining one of the most compact external SSDs worldwide. It has a reversible USB-C connector for greater convenience, and a stylish metallic design. Data transfers use USB 3.1 Gen 2 (up to 10Gbps). Importantly, the SE730H meets IEC IP68 dust and water proof requirements, as well as military-grade shock mitigation standards. Available in 256GB and 512GB, the SE730H is Windows, Mac OS, and Android compatible for seamless cross-platform usage.
Super compact with the benefit of 3D NAND
While previous generation SE730 drives were only available in 250GB, the shift to high quality 3D TLC NAND has allowed ADATA to offer the SE730H in up to 512GB. At the same time, the SE730H maintains is compact footprint as the smallest device in its class (external USB-C 3D NAND SSD). It weighs a mere 33g, and users can choose from gold or red metallic color schemes. With 3D TLC NAND, the SE730H delivers more than just bigger capacity: 3D NAND is also around 25% longer-lasting than 2D NAND, and more reliable for the life of the product while consuming less power, a plus for paired device batteries. In terms of performance, the SE730H reaches 500MB/s read and write, or about five times the speed of external mechanical drives.
ADATA Technology, a leading manufacturer of high performance DRAM modules and NAND Flash products, today launched its XPG GAMMIX product series, first shown at Computex 2017. The debut consists of the GAMMIX S10 PCIe3x4 NVMe 1.2 M.2 2280 SSD, capable of 1800MB/s read and 850MB/s write thanks to premium 3D NAND in up to 1TB capacity. The S10 features a stylish heatsink for expedited heat dissipation. It is joined by GAMMIX D10 DDR4 memory modules, which likewise boast a custom heatshield to ensure lower temperatures and more stable performance. They are offed in black and red colors, and in up to 3000MHz factory speeds with a starting speed of 2666MHz on new Intel X299 motherboards. The GAMMIX line provides gamers, PC DIY enthusiasts, and overclockers with additional options that combine performance and design, stemming from the core XPG mission statement of ensuring better experiences.
GAMMIX S10: PCIe3x4 NVMe 1.2 M.2 with a cool twist
With speeds up to 1800MB/s read and 850MB/s write, the S10 leverages the efficiency of the M.2 2280 form factor and the NVMe 1.2 protocol to better serve performance seekers, from gamers to graphics professionals. It cuts down data transfer waits, loading times, and seek latency, and packs up to 1TB 3D TLC NAND driven by an SMI controller. The custom-designed XPG heatsink ensures temperatures are at least 10 degrees Celsius lower than non-shielded M.2 SSDs, promoting stability and longevity. DRAM and SLC caching help maintain peak performance, with read/write IOPS ratings of 130K/140K. The S10 further supports LDPC error correction, and has a 2 million hour mean time before failure rating. It arrives backed by a 5-year warranty. In addition to 1TB, customers can choose from 128GB, 256GB, and 512GB models.
Toshiba Memory Corporation, the world leader in memory solutions, today announced development of the world’s first BiCS FLASH™ three-dimensional (3D) flash memory utilizing Through Silicon Via (TSV) technology with 3-bit-per-cell (triple-level cell, TLC) technology. Shipments of prototypes for development purposes started in June, and product samples are scheduled for release in the second half of 2017. The prototype of this groundbreaking device will be showcased at the 2017 Flash Memory Summit in Santa Clara, California, United States, from August 7-10.
Devices fabricated with TSV technology have vertical electrodes and vias that pass through silicon dies to provide connections, an architecture that realizes high speed data input and output while reducing power consumption. Real-world performance has been proven previously, with the introduction of Toshiba’s 2D NAND Flash memory.Add a comment
Samsung Electronics, a world leader in advanced semiconductor technology, today announced that its new semiconductor fabrication line in Pyeongtaek, South Korea, has begun mass production and shipping its first product to customers. The new facility will focus on the production of Samsung’s fourth-generation V-NAND (64 layers), adding to the company’s leading capacity for cutting-edge memory products.
“With the dedication and support of our employees, customers and partners, our new Pyeongtaek campus represents a new chapter in Samsung’s semiconductor operations,” said Oh-Hyun Kwon, Vice Chairman and Chief Executive Officer of Samsung Electronics.
With two years of construction since it broke ground in May, 2015, the fabrication line at the Pyeongtaek campus is currently the largest single Fab in the industry.Add a comment
Western Digital Corp., a global data storage technology and solutions leader, today announced that it has successfully developed its next-generation 3D NAND technology, BiCS4, with 96 layers of vertical storage capability. Sampling to OEM customers is expected to commence in the second half of calendar year 2017 and initial production output is expected in calendar year 2018. BiCS4, which was developed jointly with Western Digital's technology and manufacturing partner Toshiba Corporation, will be initially deployed in a 256-gigabit chip and will subsequently ship in a range of capacities, including a terabit on a single chip.
"Our successful development of the industry's first 96-layer 3D NAND technology demonstrates Western Digital's continued leadership in NAND flash and solid execution to our technology roadmap," said Dr. Siva Sivaram, executive vice president of memory technology at Western Digital. "BiCS4 will be available in 3-bits-per-cell and 4-bits-per-cell architectures, and it contains technology and manufacturing innovations to provide the highest 3D NAND storage capacity, performance and reliability at an attractive cost for our customers. Western Digital's 3D NAND portfolio is designed to address the full range of end markets spanning consumer, mobile, computing and data center."Add a comment
Toshiba Memory Corporation, the world leader in memory solutions, today announced development of the world’s first BiCS FLASH™ three-dimensional (3D) flash memory with a stacked cell structure. The newest BiCS FLASH™ device is the first to deliver 4-bit-per-cell (quadruple-level cell, QLC) technology, advancing capacity beyond that of triple-level cell (TLC) devices and pushing the boundaries of flash memory technology.
Multi-bit cell flash memories store data by managing the number of electrons in each individual memory cell. Achieving QLC technology posed a series of technical challenges, as increasing the number of bit-per-cell by one within same electron count requires twice the accuracy of TLC technology. Toshiba Memory has drawn on its advanced circuit design capabilities and industry-leading 64-layer 3D flash memory process technology to create the QLC 3D flash memory.Add a comment
Toshiba Memory Corporation, the world leader in memory solutions, today announced that it has developed a prototype sample of 96-layer BiCS FLASH™ three-dimensional (3D) flash memory with a stacked structure, with 3-bit-per-cell (triple-level cell, TLC) technology. Samples of the new 96-layer product, which is a 256 gigabit (32 gigabytes) device, are scheduled for release in the second half of 2017 and mass production is targeted for 2018. The new device meets market demands and performance specifications for applications that include enterprise and consumer SSD, smartphones, tablets and memory cards.
Going forward, Toshiba Memory Corporation will apply its new 96-layer process technology to larger capacity products, such as 512 gigabit (64 gigabytes) and 4-bit-per-cell (quadruple-level cell, QLC) technology, in the near future.
The innovative 96-layer stacking process combines with advanced circuit and manufacturing process technology to achieve a capacity increase of approximately 40% per unit chip size over the 64-layer stacking process. It reduces the cost per bit, and increases the manufacturability of memory capacity per silicon wafer.Add a comment
MacSales.com, a leading zero emissions Mac and PC technology company, announced today the availability of the new OWC 2.0TB Aura Pro Solid State Drive for mid-2012 to early 2013 Apple MacBook Pro with Retina display. One of the fastest internal SSDs available on the market, the Aura Pro SSD is also compatible with 2010-2012 MacBook Air.
Aura Pro SSD Also Available with Envoy Pro Enclosure
The Aura Pro 2.0TB SSD upgrade frees up and boosts capacity on the internal hard drive – at over five years of MacBook Pro ownership. The Aura Pro drive is also available as a kit with an Envoy Pro enclosure to immediately reuse an Apple internal hard drive, creating a new external USB 3.1 Gen1 portable drive.Add a comment
Beijing Memblaze Technology Co., Ltd. today announced the launch of its next generation of PCIe NVMe SSD products, PBlaze 5 700 and 900 series, for hyper-scale data center deployment and for enterprise mission critical applications, respectively. PBlaze5 utilizes high-quality 3D Enterprise-level TLC NAND and supports NVMe 1.2a, with SSD user capacities up to 11TB.
PBlaze5 comes in 2.5-inch U.2 and HHHL add-in card form factors and provides high performance 6GB/s read bandwidth (128KB) and >1M IOPS random read (4KB), with typical read write latency of 90/15μs. PBlaze5 U.2 interface is hot plugable, hot removable and hot swapable, effectively reducing data center operation complexity.Add a comment
ADATA Technology, a leading manufacturer of high performance DRAM modules and NAND Flash products, today launched the industrial-grade IM2P3388 PCIe Gen3x4 M.2 2280 solid state drive. It employs 3D MLC NAND Flash and an SMI controller to deliver performance several times faster than SATA III SSDs, with read up to 2500MB/s and write reaching 1100MB/s. The M.2 2280 form factor fits easily in the IT setup of industrial and enterprise users, while the IM2P3388 can withstand a wide temperature range, shocks, and vibration. The IM2P3388 is offered in up to 1TB and supports a range of features such as S.M.A.R.T, TRIM, power fail protection, and secure erase.
Ultra-fast 3D MLC NAND M.2 SSD
The IM2P3388 complies with NVMe 1.2 specifications to provide performance optimized for low latency, big bandwidth PCI Express 3.0 x4 (four lanes). Users tap up to 2500MB/s read and 1100MB/s write, greatly accelerating data transfers to help increase productivity and efficiency. ADATA is offering the IM2P3388 in 128GB, 256GB, 512GB, and 1TB. All models carry premium 3D MLC NAND that has been carefully sorted, tested, and verified to the highest standards. SLC and DRAM caching provide speed boosts for sustained performance during even the most intense activity sessions, preventing bandwidth or IOPS drop offs.